DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON RF TWIN TRANSISTOR

µµµµPA895TD

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)

Document No. PU10152EJ02V0DS (2nd edition)

Date Published April 2003 CP(K)

Printed in Japan

©

©

©

© NEC Compound Semiconductor Devices 2002, 2003

The mark

•

•

•

• shows major revised points.

FEATURES

• Built-in low phase distortion transistor suited for OSC applications

fT = 4.5 GHz TYP.,

S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

• Built-in 2 transistors (2

× 2SC5800)

• 6-pin lead-less minimold (M16, 1208 package)

BUILT-IN TRANSISTORS

Q1, Q2

3-pin thin-type ultra super minimold part No.

2SC5800

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

µPA895TD

50 pcs (Non reel)

• 8 mm wide embossed taping

µPA895TD-T3

10 kpcs/reel

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.