ABSOLUTE MAXIMUM RATINGS (TA = +25

°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

9

V

Collector to Emitter Voltage

VCEO

5.5

V

Emitter to Base Voltage

VEBO

1.5

V

Collector Current

IC

100

mA

110 in 1 element

Total Power Dissipation

Ptot

Note

130 in 2 elements

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy PCB

ELECTRICAL CHARACTERISTICS (TA = +25

°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−

−

600

nA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−

−

600

nA

DC Current Gain

hFE

Note 1

VCE = 1 V, IC = 5 mA

100

120

145

−

Gain Bandwidth Product (1)

fT

VCE = 1 V, IC = 5 mA, f = 2 GHz

3.0

4.5

−

GHz

Gain Bandwidth Product (2)

fT

VCE = 1 V, IC = 15 mA, f = 2 GHz

5.0

6.5

−

GHz

Insertion Power Gain (1)

S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz

3.0

4.0

−

dB

Insertion Power Gain (2)

S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz

4.5

5.5

−

dB

Noise Figure

NF

VCE = 1 V, IC = 10 mA, f = 2 GHz,

ZS = Zopt

−

1.9

2.5

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 0.5 V, IE = 0 mA, f = 1 MHz

−

0.6

0.8

pF

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

FB

Marking

kP

hFE Value

100 to 145

Data Sheet PU10335EJ02V0DS

2

µPA895TS