BSP090 datasheet(7/12 Pages) PHILIPS

7 / 12 page

1997 Mar 13

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode vertical

D-MOS transistor

BSP090

Fig.6

Capacitance as a function of drain-source

voltage; typical values.

VGS = 0; f = 1 MHz; Tj =25 °C.

(1) Ciss.

(2) Coss.

(3) Crss.

handbook, halfpage

−8

(1)

(2)

(3)

−16

VDS (V)

−24

2000

(pF)

1500

500

1000

MGD729

Fig.7 Output characteristics; typical values.

Tamb =25 °C; tp =80 µs; δ =0.

handbook, halfpage

−4

(A)

−8

VDS (V)

−12

−25

−20

−3.5 V

−2.5 V

−15

−10

−5

MGD730

VGS =

−10 V

−6 V

−5 V

−4.5 V

−3 V

−4 V

Fig.8 Transfer characteristics; typical values.

VDS = −10 V; Tamb =25 °C; tp =80 µs; δ =0.

handbook, halfpage

−30

−20

−10

−2

(A)

−4

−8

−6

VGS (V)

MGD731

Fig.9

Gate-source voltage and drain-source

voltage as a function of total gate charge;

typical values.

VDD = −15 V; ID = −2.8 A; Tamb =25 °C.

handbook, halfpage

−12

−8

−4

VGS

(V)

VGS

−18

−12

−6

VDS

(V)

QG (nC)

MGD732

VDS

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