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BAS16H Datasheet(PDF) 4 Page - NXP Semiconductors |
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BAS16H Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 10 page ![]() 9397 750 14478 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 15 April 2005 4 of 10 Philips Semiconductors BAS16H High-speed switching diode in SOD123F package 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [3] When switched from IF = 10 mA; tp = 20 ns. Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 1 mA [1] - - 715 mV IF = 10 mA [1] - - 855 mV IF = 50 mA [1] --1 V IF = 150 mA [1] - - 1.25 V IR reverse current VR = 25 V - - 30 nA VR = 75 V - - 1 µA VR = 25 V; Tj = 150 °C --30 µA VR = 75 V; Tj = 150 °C --50 µA Cd diode capacitance VR = 0 V; f = 1 MHz - - 1.5 pF trr reverse recovery time [2] --4 ns VFR forward recovery voltage [3] - - 1.75 V |
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