BSP255 datasheet(6/10 Pages) PHILIPS

6 / 10 page

1996 Aug 05

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

vertical D-MOS transistor

BSP255

Fig.5

Gate-source voltage as a function of

total gate charge; typical values.

VDD = −50 V: ID = −180 mA.

handbook, halfpage

0.5

1.0

1.5

2.0

2.5

−10

−8

−6

−4

−2

MBH443

Qg (nC)

VGS

(V)

Fig.6 Output characteristics; typical values.

Tj =25 °C.

handbook, halfpage

−2

−4

−6

−8

−10

−12

−600

−800

−400

−200

MBH441

VDS (V)

(mA)

VGS = −10 V

−4.5 V

−4.0 V

−3.5 V

−3.0 V

−2.5 V

−2.0 V

Fig.7 Transfer characteristics; typical values.

VDS = −10 V; Tj =25 °C.

handbook, halfpage

−2

−4

−6

−8

−10

−200

−400

−600

−800

MBH440

VGS (V)

(mA)

Fig.8

Source-drain current as a function of

source-drain diode forward voltage;

typical values.

VGD =0.

(1) Tj = 150 °C.

(2) Tj =25 °C.

(3) Tj = −65 °C.

handbook, halfpage

−2.5

(1)

(2)

VSD (V)

−0.8

−0.4

−2.0

ISD

(A)

MBH436

−1.6

−1.2

−0.5

−1.0

−1.5

−2.0

(3)

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