BSR13 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1999 Apr 15

Philips Semiconductors

Product speciﬁcation

NPN switching transistors

BSR13; BSR14

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

8pF

transition frequency

IC = 20 mA; VCE =20V;

f = 100 MHz

BSR13

250

−

MHz

BSR14

300

−

MHz

Switching times (between 10% and 90% levels); see Fig.2

ton

turn-on time

ICon = 150 mA; IBon = 15 mA;

IBoff = −15 mA

−

delay time

−

rise time

−

toff

turn-off time

−

250

storage time

−

200

fall time

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Vi = 9.5 V; T = 500 µs; tp =10 µs; tr =tf ≤ 3 ns.

R1 = 68

Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.

VBB = −3.5 V; VCC = 29.5 V.

Oscilloscope: input impedance Zi = ≥ 100 Ω.

handbook, full pagewidth

DUT

MLB826

(probe)

450

Ω

(probe)

450

Ω

oscilloscope

VBB

VCC

Fig.2 Test circuit for switching times.

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