BSS92 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1997 Jun 19

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

vertical D-MOS transistor

BSS92

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the Limiting values and Thermal characteristics

1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum

10 mm

× 10 mm.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage (DC)

−−240

VGSO

gate-source voltage (DC)

open drain

−±20

drain current (DC)

−−150

IDM

peak drain current

−−600

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

Tstg

storage temperature

−55

+150

°C

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

125

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = −250 µA

−240 −−

VGSth

gate-source threshold voltage

VDS =VGS; ID = −1mA

−0.8

−−2.8

IDSS

drain-source leakage current

VGS = 0; VDS = −60 V

−−−200 nA

VGS = 0; VDS = −200 V

−−−60

µA

IGSS

gate leakage current

VDS = 0; VGS = ±20 V

−−±100 nA

RDSon

drain-source on-state resistance

VGS = −10 V; ID = −100 mA

−

Ω

y

fs

forward transfer admittance

VDS = −25 V; ID = −100 mA

200

−

Ciss

input capacitance

VGS = 0; VDS = −25 V; f = 1 MHz

−

Coss

output capacitance

VGS = 0; VDS = −25 V; f = 1 MHz

−

Crss

reverse transfer capacitance

VGS = 0; VDS = −25 V; f = 1 MHz

−

Switching times (see Figs 2 and 3)

ton

turn-on time

VGS =0to −10 V; VDD = −50 V;

ID = −250 mA

−

toff

turn-off time

VGS = −10 to 0 V; VDD = −50 V;

ID = −250 mA

−

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