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TC236P Datasheet(PDF) 9 Page - Texas Instruments |
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TC236P Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 17 page ![]() TC236P 680- × 500-PIXEL CCD IMAGE SENSOR SOCS055A – JUNE 1996 – REVISED APRIL 1997 9 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 Expanded Section of Parallel Transfer IAG1, 2 SAG SRG 1 µs Min 684 Pulses 684 Pulses ODB IAG1, 2 SAG SRG RST Clear Integrate Transfer to Memory Readout 250 Cycles 500 Pulses 500 Pulses 500 Pulses Figure 8 . Progressive-Scan Timing Diagram With Dual-Register Readout serial registers The storage-area gate and serial gate(s) are used to transfer the charge line by line from the storage area into the serial register(s). Depending on the readout mode, one or both serial registers is used. If both are used, the registers are read out in parallel. readout and video processing After transfer into the serial register(s), the pixels are read out and placed onto a charge-detection node. The node must be reset to a reference level before the next pixel is placed onto the detection node. The timing for the serial-register readout, which includes the external pixel clamp and sample-and-hold signals needed to implement correlated double sampling (CDS), is shown in Figure 9. As the charge is transferred onto the detection node, the potential of this node changes in proportion to the amount of signal received. The change is sensed by an MOS transistor and, after proper buffering, the signal is supplied to the output terminal of the image sensor. The buffer amplifier converts charge into a video signal. Figure 10 shows the circuit diagram of the charge-detection node and output amplifier. The detection nodes and amplifiers are placed a short distance away from the edge of the storage area; therefore, each serial register contains four dummy elements that are used to span the distance between the serial registers and the amplifiers. |
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