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Rev. 4.0, 2022-7-14

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The information in this document is subject to change without notice.

CGH40120P

Package Types: 440206

PN’s: CGH40120P

120 W, RF Power GaN HEMT

Description

Wolfspeed’s CGH40120P is an unmatched, gallium nitride (GaN)

high electron mobility transistor (HEMT). The CGH40120P,

operating from a 28 volt rail, offers a general purpose, broadband

solution to a variety of RF and microwave applications. GaN

HEMTs offer high efficiency, high gain and wide bandwidth

capabilities making the CGH40120P ideal for linear and

compressed amplifier circuits. The transistor is available in a

metal-ceramic pill package.

Large Signal Models Available for ADS and MWO

Applications

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms

Features

• Up to 2.5 GHz Operation

• 20 dB Small Signal Gain at 1.0 GHz

• 15 dB Small Signal Gain at 2.0 GHz

• 120 W Typical P

SAT

• 70% Efficiency at P

SAT

• 28 V Operation