GF4435 datasheet(2/5 Pages) GE

2 / 5 page

Electrical Characteristics (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250

µA

–1.0

–– 3.0

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

––

±100

Zero Gate Voltage Drain Current

IDSS

VDS = –30V, VGS = 0V

––

–1.0

µA

On-State Drain Current(1)

ID(on)

VDS

≥ –5V, VGS = –10V

–40

––

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = –250

µA

–30

––

Drain-Source On-State Resistance(1)

RDS(on)

VGS = –10V, ID = –8.0A

–

15.3

Ω

VGS = –4.5V, ID = –5.0A

–

25.3

Forward Transconductance(1)

gfs

VDS = –15V, ID = –8.0A

–

Dynamic

Total Gate Charge

–

Gate-Source Charge

Qgs

VDS = –15V, VGS = –10V

–

8.5

–

Gate-Drain Charge

Qgd

ID = –4.6A

–

10.3

–

Turn-On Delay Time

td(on)

–

Rise Time

VDD = –15V, RL = 15

Ω

–

Turn-Off Delay Time

td(off)

≈ –1A, VGEN = –10V

–

120

Fall Time

RG = 6

Ω

–

Input Capacitance

Ciss

VGS = 0V

–

2520

–

Output Capacitance

Coss

VDS = –15V

–

490

–

Reverse Transfer Capacitance

Crss

f = 1.0MHZ

–

335

–

Source-Drain Diode

Maximum Diode Forward Current

––

–2.1

Diode Forward Voltage

VSD

IS = –2.1A, VGS = 0V

––0.75

–1.2

Note:

(1) Pulse test; pulse width

≤ 300 µs,

duty cycle

≤ 2%

GF4435

P-Channel Enhancement-Mode MOSFET

VIN

VDD

VGEN

VOUT

DUT

Input, VIN

td(on)

Output, VOUT

ton

td(off)

toff

INVERTED

90%

10%

90 %

50%

10%

90%

PULSE WIDTH

Switching

Test Circuit

Switching

Waveforms

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