RB080AR-40

Schottky Barrier Diode

Data sheet

●Outline

VR

40

V

IF

4.0

A

IFSM

40

A

●Features

●Inner Circuit

High reliability

Wafer level chip size package

Low VF

●Application

●Packaging Specifications

General rectification

Packing

Embossed Tape

Reel Size(mm)

180

Taping Width(mm)

8

●Structure

Quantity(pcs)

7000

Epitaxial planar

Taping Code

T7R

Marking

F

●Absolute Maximum Ratings (Tc = 25ºC unless otherwise stated)

　 　 　 　 　 　 　 　 　 　

Parameter

Symbol

Conditions

Limits

Unit

Repetitive peak reverse voltage

VRM

Duty≦0.5

40

V

Reverse voltage

VR

Reverse direct voltage

40

V

DC forward current

IF

Glass epoxy mounted 、DCcurrent

4.0

A

Non-repetitive peak surge

forward current

IFSM-cyc

60Hz half sin waveform

40

A

IFSM-t

tp=5ms, square wave

40

A

Junction temperature(1)

Tj

-

150

℃

Storage temperature

Tstg

-

-55 ～ 150

℃

Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to f ulf ill dPd/dTj<1/Rth(j-a)

●Characteristics (Tj = 25ºC unless otherwise stated)

　 　 　 　 　 　 　 　 　

Parameter

Symbol

Conditions

Min.

Typ. Max.

Unit

Forward voltage

VF

IF=4.0A

-

0.53

0.63

V

Reverse current

IR

VR=40V

-

60

200

μA

Capacitance between terminals

Ct

VR=10V f=1.0MHz

-

110

-

pF

Reverse recovery time

trr

IF= IR=100mA Irr=10mA

-

25

-

ns

※Caution：static electricity

Attention

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