2SA554 datasheet(1/4 Pages) DGNJDZ

Part #	2SA554

Description	SOT-89-3L Plastic-Encapsulate Transistors

PDF	4 Pages

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Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

2SA554

TRANSISTOR (PNP)

FEATURES

Low Saturation Voltage

High Speed Switching

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= -0.1mA,IE=0

-100

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA,IB=0

-100

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-0.1mA,IC=0

-6

V

Collector cut-off current

ICBO

VCB=-100V,IE=0

-1

uA

Emitter cut-off current

IEBO

VEB=-4V,IC=0

-1

uA

VCE=-3V, IC=-100mA

120

270

DC current gain

hFE

Collector-emitter saturation voltage

VCE(sat)

IC=-1A,IB=-50mA

-0.3

V

Collector output capacitance

Cob

VCB=-10V,IE=0, f=1MHz

32

pF

Transition frequency

fT

VCE=-5V,IC= -0.1A

MHz

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current

-2

A

PC

Collector Power Dissipation

500

mW

RθJA

Thermal Resistance From Junction To Ambient

250

℃/W

Operation Junction and

Storage Temperature Range

-55~+150

℃

IC=-0.5A,IB=-25mA

-0.2

V

30

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

TJ,TSTG

Equivalent Circuit

A554

MARKING: A554

SOT-89-3L Plastic-Encapsulate Transistors

DONGGUAN NANJING ELECTRONICS LTD.,

Dongguan Nanjing Electronics Ltd.

1/4

www.dgnjdz.com

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