2SC2883 datasheet(1/4 Pages) DGNJDZ

Part #	2SC2883

Description	SOT-89-3L Plastic-Encapsulate Transistors

PDF	4 Pages

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Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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2SC2883

TRANSISTOR (NPN)

FEATURES

Low voltage

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

1.5

A

PC

Collector Power Dissipation

0.5

W

Operation Junction and

Storage Temperature Range

℃

TJ,Tstg

-55~150

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO IC=1mA,IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO IC=10mA,IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1mA,IC=0

5

V

Collector cut-off current

ICBO

CB

V =30V,IE=0

0.1

μA

Emitter cut-off current

IEBO

EB

V =5V,IC=0

0.1

μA

DC current gain

hFE

CE

V =2V,IC=0.5A

100

320

Collector-emitter saturation voltage

VCE(sat)

C

I =1.5A,IB=30mA

2

V

Base-emitter voltage

VBE

CE

V =2V,IC=0.5A

1

V

Transition frequency

fT

CE

V =2V,IC=500mA

120

MHz

Collector output capacitance

Cob

CB

V =10V,IE=0,f=1MHz

40

pF

CLASSIFICATION OF hFE

Rank

O

Y

Range

100-200

160-320

MARKING

GO

GY

SOT-89-3L Plastic-Encapsulate Transistors

DONGGUAN NANJING ELECTRONICS LTD.,

Dongguan Nanjing Electronics Ltd.

1/4

www.dgnjdz.com

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