Rev. 04.3, 2022-1-27

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The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

Package Types: H-87265J-2

Thermally-Enhanced High Power RF GaN on SiC HEMT

270 W, 48 V, 2620 – 2690 MHz

Description

The GTVA262701FA is a 270-watt GaN on SiC high electron mobility

transistor (HEMT) for use in multi-standard cellular power amplifier

applications. It features input matching, high efficiency, and a

thermally-enhanced surface-mount package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance: 10 µs pulse

width, 10% duty cycle, 2690 MHz, 48 V

- Output power at P

3dB = 270 W

- Efficiency = 66%

- Gain = 18.1 dB

• Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

• Capable of handling 10:1 VSWR @48 V, 60 W

(WCDMA) output power

• Pb-free and RoHS compliant

GTVA262701FA

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz.

3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

g262701fa-gr1

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)

V

DD = 48 V, IDQ = 320 mA, POUT = 60 W avg, ƒ = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

16.5

17

—

dB

Drain Efficiency

h

D

40

42

—

%

Adjacent Channel Power Ratio

ACPR

—

–28

–27

dBc

Output PAR @ 0.01% CCDF

OPAR

5.5

6.2

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!