Rev. 04.1, 2022-1-27

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The information in this document is subject to change without notice.

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GTVA263202FC

Package Types: H-37248-4

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance, 2690 MHz, 48 V,

combined outputs

- Output power at P

3dB = 340 W

- Drain efficiency = 70%

- Gain = 16 dB

• Capable of handling 10:1 VSWR @48 V, 80 W (CW)

output power

• Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF GaN on SiC HEMT

340 W, 48 V, 2620 – 2690 MHz

Description

The GTVA263202FC is a 340-watt (P

3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency, and

a thermally-enhanced surface-mount package with earless flange.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)

V

DD = 48 V, IDQ = 200 mA (per side), POUT = 80 W avg, ƒ = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

16

17

—

dB

Drain Efficiency

h

D

34

40

—

%

Adjacent Channel Power Ratio

ACPR

—

-29

-26.5

dBc

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!