PEMZ1

NPN/PNP general purpose transistor

29 December 2022

Product data sheet

1. General description

NPN/PNP double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD)

plastic package.

2. Features and benefits

• 300 mW total power dissipation

• Very small 1.6 x 1.2 mm ultra thin package

• Self alignment during soldering due to straight leads

• Replaces two SC-75/SC-89 packaged transistors on same PCB area

• Reduced required PCB area

• Reduced pick and place costs.

3. Applications

• General purpose switching and amplification

• Complementary MOSFET driver for switch mode power supply

• Complementary driver for audio amplifiers.

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

VCEO

collector-emitter

voltage

open base

-

-

40

V

IC

collector current

-

-

100

mA

hFE

DC current gain

VCE = 6 V; IC = 1 mA; Tamb = 25 °C

120

-

-

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

E1

emitter TR1

2

B1

base TR1

3

C2

collector TR2

4

E2

emitter TR2

5

B2

base TR2

6

C1

collector TR1

1

2

3

4

5

6

SOT666

sym019

B1

E1

C2

B2

C1

TR1

TR2

E2