FETek Technology Corp.

Data and specifications subject to change without notice.

www.fetek.com.tw

Ver : A

FKN3603

P-Ch 30V Fast Switching MOSFETs

22

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-30

---

---

V

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=-10V , ID=-3A

---

---

60

m



VGS=-4.5V , ID=-3A

---

---

80

VGS=-2.5V , ID=-2A

---

---

120

VGS=-1.8V , ID=-1A

---

---

200

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-0.5

---

-1.2

V

IDSS

Drain-Source Leakage Current

VDS=-24V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=-24V , VGS=0V , TJ=55℃

---

---

-5

IGSS

Gate-Source Leakage Current

VGS=±12V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-3A

---

9

---

S

Qg

Total Gate Charge (-4.5V)

VDS=-15V , VGS=-4.5V , ID=-2A

---

8.1

11.3

nC

Qgs

Gate-Source Charge

---

1.2

1.7

Qgd

Gate-Drain Charge

---

2.1

2.9

Td(on)

Turn-On Delay Time

VDD=-15V , VGS=-4.5V ,

RG=3.3, ID=-2A

---

4

8.0

ns

Tr

Rise Time

---

33.2

60

Td(off)

Turn-Off Delay Time

---

26

52

Tf

Fall Time

---

11.6

23.2

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

750

1050

pF

Coss

Output Capacitance

---

79

111

Crss

Reverse Transfer Capacitance

---

57

80

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

1,4

VG=VD=0V , Force Current

---

---

-2.6

A

VSD

Diode Forward Voltage

2

VGS=0V , IS=-1A , TJ=25℃

---

---

-1

V

trr

Reverse Recovery Time

IF=-3A , dI/dt=100A/µs ,

TJ=25℃

---

20

---

nS

Qrr

Reverse Recovery Charge

---

16

---

nC

Note :

1.The data tested by surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The power dissipation is limited by 150

℃ junction temperature

4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Diode Characteristics