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IXGP16N60C2 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXGP16N60C2 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 2 page ![]() © 2004 IXYS All rights reserved G = Gate C = Collector E = Emitter TAB = Collector Symbol Test Conditions Maximum Ratings V CES T J = 25 °C to 150°C 600 V V CGR T J = 25 °C to 150°C; R GE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C40 A I C110 T C = 110°C16 A I D110 T C = 110°C (IXG_16N60C2D1 diode) 11 A I CM T C = 25°C, 1 ms 100 A SSOA V GE = 15 V, TJ = 125°C, RG = 22 Ω I CM = 32 A (RBSOA) Clamped inductive load @0.8 V CES P C T C = 25°C 150 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C M d Mounting torque (M3.5 screw) 0.55/5 Nm/lb.in. Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature 260 °C soldering SMD devices for 10s Weight TO-220 4 g TO-263 2 g Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V GE(th) I C = 250 µA, VCE = VGE 2.5 5.0 V I CES V CE = VCES 16N60C2 25 µA V GE = 0 V 16N60C2D1 50 µA I GES V CE = 0 V, VGE = ±20 V ±100 nA V CE(sat) I C = 12 A, VGE = 15 V 3.0 V Note 2 T J=125°C 2.1 V DS99142A(3/04) HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA 16N60C2 IXGP 16N60C2 IXGA 16N60C2D1 IXGP 16N60C2D1 V CES = 600 V I C25 =40 A V CE(sat) = 3.0 V t fi(typ) =35 ns D1 TO-220 (I XGP) G C E C (TAB) C (TAB) G C TO-263 (I XGA) Advance Technical Information Features Very high frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages High power density Very fast switching speeds for high frequency applications |
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