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SFH4940 Datasheet(PDF) 5 Page - ams AG |
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SFH4940 Datasheet(HTML) 5 Page - ams AG |
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5 / 16 page ![]() SFH 4940 DATASHEET DATASHEET 5 | Version 1.3 | 2023-06-06 Characteristics I F = 40 mA; tp = 20 ms; TA = 25 °C Parameter Symbol Values Number of emitters n 10 Dimension “B” (see drawing) l min. max. 24.8 mm 25.2 mm Peak wavelength λ peak typ. 950 nm Centroid wavelength λ centroid typ. 940 nm Spectral bandwidth at 50% I rel,max (FWHM) ∆λ typ. 42 nm Half angle φ typ. 10 ° Dimensions of active chip area L x W typ. 0.3 x 0.3 mm x mm Distance chip surface to lens top H min. max. 1.3 mm 1.9 mm Rise time (10% / 90%) I F = 40 mA; RL = 50 Ω t r typ. 12 ns Fall time (10% / 90%) I F = 40 mA; RL = 50 Ω t f typ. 12 ns Forward voltage 4) V F typ. max. 1.35 V 1.6 V Forward voltage 4) I F = 1 A; tp = 100 µs V F typ. max. 3.6 V 4.5 V Reverse current 3) V R = 5 V I R typ. max. 0.01 µA 10 µA Radiant intensity 1) I F = 1 A; tp = 40 µs I e typ. 520 mW/sr Total radiant flux 5) I F = 40 mA; tp = 20 ms Φ e typ. 30 mW Temperature coefficient of voltage TC V typ. -0.8 mV / K Temperature coefficient of brightness TC I typ. -0.3 % / K Temperature coefficient of wavelength TC λ typ. 0.3 nm / K Thermal resistance junction solder point real 6) R thJS real max. 650 K / W Thermal resistance junction ambient real 7) R thJA max. 750 K / W |
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