BD034 datasheet(2/3 Pages) DGNJDZ

Part #	BD034

Description	TO-126 Plastic-Encapsulate Transistors

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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2 / 3 page

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-100µA,IE=0

-110

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA,IB=0

-95

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA,IC=0

-7

Collector cut-off current

ICBO

VCB=-100V,IE=0

-1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-1

μA

hFE(1)

VCE=-2V, IC=-100mA

100

560

DC current gain

hFE(2)

VCE=-2V, IC=-1.5A

Collector-emitter saturation voltage

VCE(sat)

IC=-2A,IB=-200mA

-0.5

Base-emitter voltage

VBE

VCE=-5V, IC=-500mA

-1

Transition frequency

VCE=-1V,IC=-250mA, f=1MHz

MHz

CLASSIFICATION OF hFE(1)

RANK

RANGE

100-200

140-280

200-400

280-560

(/(&75,&$/&+$5$&7(5,67,&6

T =25

unless otherwise specified

2/3

Dongguan Nanjing Electronics Ltd.

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