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SI7157DP Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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SI7157DP Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc P-Channel MOSFET Transistor SI7157DP DESCRIPTION · Drain Current –ID=-35A@ TC=25℃ · Drain Source Voltage- VDSS= -60V(Min) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Synchronous Rectification in SMPS · Switching converters,motor driver,relay driver · Power Tools · UPS · Motor Control ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) -60 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ -35 A IDM Pulsed drain current @ TC=25℃ -80 A EAS Avalanche Energy, Single Pulse ,L=0.1mH, TC=25℃ 144 mJ PD Power Dissipation ,TC=25℃ 62.5 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃ /W |
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