ACDBQC0130L-HF

Page 1

Io = 100 mA

VR = 30 Volts

RoHS Device

Halogen Free

Circuit Diagram

Comchip Technology CO., LTD.

Low VF SMD Schottky Barrier Diode

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Conditions

Min

Max

Unit

Forward voltage

VF

V

Reverse current

Capacitance between terminals

VR = 1V, f = 1MHZ

IR

CT

µA

pF

IF = 10mA

VR = 10V

Maximum Rating (at TA=25°C unless otherwise noted)

°C

TSTG

Typ

IO

VR

VRRM

Average forward rectified current

Reverse voltage

Repetitive peak reverse voltage

Peak forward surge current

Symbol

Parameter

Conditions

Min

Max

Unit

V

V

mA

Tj

Storage temperature range

Junction temperature range

°C

IFSM

A

°C/W

Thermal resistance

Junction to ambient

RθJA

High-Reliability and High-Performance

AQW-G1002

Features

- Low forward voltage.

- Majority carrier conduction.

- Extremely thin package.

- Designed for mounting on small surface.

Mechanical data

- Case: 0402C/SOD-923F standard package,

molded plastic.

- Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

- Mounting position: Any.

- Weight: 0.001 grams (approx.).

- Polarity: Indicated by cathode band.

- AEC-Q101 Qualified.

Dimensions in inches and (millimeter)

0402C/SOD-923F

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

0.022(0.55)

0.018(0.45)

0.001(0.02)

Max.

0.022(0.55)

0.018(0.45)

0.026(0.65)

BSC.

0.012(0.30)

0.008(0.20)

35

45

8.3 ms single half sine-wave (1 cyc)

10

0.25

0.30

30

35

100

3

200

-40

+125

-40

+125

REV:D