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ISC0604NLS Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # ISC0604NLS
Description  OptiMOSTM 5 Power-Transistor, 80 V
PDF  11 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

ISC0604NLS Datasheet(HTML) 4 Page - Infineon Technologies AG

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4
OptiMOSTM5Power-Transistor,80V
ISC0604NLS
Rev.2.1,2023-04-04
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
80
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
1.1
1.7
2.3
V
VDS=VGS,ID=103µA
Zero gate voltage drain current
IDSS
-
-
0.1
10
1
100
µA
VDS=80V,VGS=0V,Tj=25°C
VDS=80V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
2.3
2.9
2.8
3.5
m
Ω
VGS=10V,ID=50A
VGS=4.5V,ID=25A
Gate resistance
1)
RG
-
1.7
-
Ω
-
Transconductance
gfs
70
-
-
S
|VDS|
≥2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
1)
Ciss
-
5200
6800
pF
VGS=0V,VDS=40V,f=1MHz
Output capacitance
1)
Coss
-
750
980
pF
VGS=0V,VDS=40V,f=1MHz
Reverse transfer capacitance
1)
Crss
-
30
52
pF
VGS=0V,VDS=40V,f=1MHz
Turn-on delay time
td(on)
-
9.4
-
ns
VDD=40V,VGS=10V,ID=50A,
RG,ext=3
Ω
Rise time
tr
-
8.2
-
ns
VDD=40V,VGS=10V,ID=50A,
RG,ext=3
Ω
Turn-off delay time
td(off)
-
45
-
ns
VDD=40V,VGS=10V,ID=50A,
RG,ext=3
Ω
Fall time
tf
-
17
-
ns
VDD=40V,VGS=10V,ID=50A,
RG,ext=3
Ω
Table6Gatechargecharacteristics2)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
15
-
nC
VDD=40V,ID=50A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
8.8
-
nC
VDD=40V,ID=50A,VGS=0to4.5V
Gate to drain charge
Qgd
-
13
-
nC
VDD=40V,ID=50A,VGS=0to4.5V
Switching charge
Qsw
-
19
-
nC
VDD=40V,ID=50A,VGS=0to4.5V
Gate charge total
1)
Qg
-
40
50
nC
VDD=40V,ID=50A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.8
-
V
VDD=40V,ID=50A,VGS=0to4.5V
Gate charge total
Qg
-
78
-
nC
VDD=40V,ID=50A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
32
-
nC
VDS=0.1V,VGS=0to4.5V
Output charge
Qoss
-
79
-
nC
VDS=40V,VGS=0V
1) Defined by design. Not subject to production test.
2) See
″Gate charge waveforms″ for parameter definition



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