2003 Oct 15

4

NXP Semiconductors

Product data sheet

PNP/PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = open

PEMB3; PUMB3

THERMAL CHARACTERISTICS

Notes

1.

Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

2.

Reflow soldering is the only recommended soldering method.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Per transistor

Rth j-a

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT363

note 1

625

K/W

SOT666

notes 1 and 2

625

K/W

Per device

Rth j-a

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT363

note 1

416

K/W

SOT666

note 1

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −50 V; IE = 0

−

−

−100

nA

ICEO

collector-emitter cut-off current

VCE = −30 V; IB = 0

−

−

−1

μA

VCE = −30 V; IB = 0; Tj = 150 °C

−

−

−50

μA

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0

−

−

−100

nA

hFE

DC current gain

VCE = −5 V; IC = −1 mA

200

−

−

VCEsat

saturation voltage

IC = −5 mA; IB = −0.25 mA

−

−

−100

mV

R1

input resistor

3.3

4.7

6.1

k

Ω

Cc

collector capacitance

IE = ie = 0; VCB = −10 V;

f = 1 MHz

−

−

3

pF