2004 Apr 07

4

NXP Semiconductors

Product data sheet

NPN/PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = open

PEMD6; PUMD6

THERMAL CHARACTERISTICS

Note

1.

Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

CHARACTERISTICS

Tamb = 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Per transistor

Rth(j-a)

thermal resistance from junction to

ambient

note 1

SOT363

625

K/W

SOT666

625

K/W

Per device

Rth(j-a)

thermal resistance from junction to

ambient

note 1

SOT363

416

K/W

SOT666

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base cut-off current

VCB = 50 V; IE = 0

−

−

100

nA

ICEO

collector-emitter cut-off current

VCE = 30 V; IB = 0

−

−

1

μA

VCE = 30 V; IB = 0; Tj = 150 °C

−

−

50

μA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0

−

−

100

nA

hFE

DC current gain

VCE = 5 V; IC = 1 mA

200

−

−

VCEsat

collector-emitter saturation voltage

IC = 5 mA; IB = 0.25 mA

−

−

100

mV

R1

input resistor

3.3

4.7

6.1

k

Ω

Cc

collector capacitance

IE = Ie = 0; VCB = 10 V; f = 1 MHz

TR1 (NPN)

−

−

2.5

pF

TR2 (PNP)

−

−

3

pF