Data Sheet G15204EJ4V0DS

3

µµµµPC4071

ELECTRICAL CHARACTERISTICS (TA = 25°C, V

±±±± = ±±±±15 V)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Input Offset Voltage

VIO

RS

≤ 50 Ω±3

±10

mV

Input Offset Current

Note 7

IIO

±5

±50

pA

Input Bias Current

Note 7

IB

30

200

pA

Large Signal Voltage Gain

AV

RL

≥ 2 kΩ , VO = ±10 V

25000

200000

Supply Current

ICC

IO = 0 A

2.0

2.7

mA

Common Mode Rejection Ratio

CMR

70

86

dB

Supply Voltage Rejection Ratio

SVR

70

86

dB

RL

≥ 10 kΩ±12

±13.5

V

Output Voltage Swing

Vom

RL

≥ 2 kΩ±10

±12

V

Common Model Input Voltage Range

VICM

±10

V

Slew Rate

SR

AV = 1

13

V/

µs

Unity Gain Frequency

funity

3MHz

Input Equivalent Noise Voltage

Vn

RS = 100

Ω, f = 10 Hz to 10 kHz

4

µVr.m.s.

Input Equivalent Noise Voltage Density

en

RS = 100

Ω, f = 1 kHz

18

nV/

√Hz

Input Offset Voltage

VIO

RS

≤ 50 Ω, TA = –20 to +70°C

±13mV

Average VIO Temperature Drift

∆VIO/∆TTA = –20 to +70°C

±10

µV/°C

Input Offset Current

Note 7

IIO

TA = –20 to +70°C

±2nA

Input Bias Current

Note 7

IB

TA = –20 to +70°C7

nA

Notes 7. Input bias currents flow into IC. Because each currents are gate leak current of P-channel J-FET on input

stage. And that are temperature sensitive. Short time measuring method is recommendable to maintain the

junction temperature close to the operating ambient temperature.