© Semiconductor Components Industries, LLC, 2000

November, 2000 – Rev. 2

1

Publication Order Number:

MTP23P06V/D

MTP23P06V

Preferred Device

Power MOSFET

23 Amps, 60 Volts

P–Channel TO–220

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and power

motor controls, these devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected voltage

transients.

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

60

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

60

Vdc

Gate–to–Source Voltage

– Continuous

– Non–repetitive (tp ≤ 10 ms)

VGS

VGSM

± 15

± 25

Vdc

Vpk

Drain Current – Continuous @ 25

°C

°C

ID

ID

IDM

23

15

81

Adc

Apk

Total Power Dissipation @ 25

°C

Derate above 25

°C

PD

90

0.60

Watts

W/

°C

Operating and Storage Temperature

Range

TJ, Tstg

–55 to

175

°C

Single Pulse Drain–to–Source Avalanche

Energy – Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc, Peak

IL = 23 Apk, L = 3.0 mH, RG = 25 Ω)

EAS

794

mJ

Thermal Resistance – Junction to Case

R

θJC

R

θJA

1.67

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from Case for 10

seconds

TL

260

°C

D

S

G

P–Channel

23 AMPERES

60 VOLTS

RDS(on) = 120 mΩ

Preferred devices are recommended choices for future use

and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

MTP23P06V

TO–220AB

50 Units/Rail

TO–220AB

CASE 221A

STYLE 5

1

2

3

4

http://onsemi.com

MARKING DIAGRAM

& PIN ASSIGNMENT

MTP23P06V

= Device Code

LL

= Location Code

Y

= Year

WW

= Work Week

MTP23P06V

LLYWW

1

Gate

3

Source

4

Drain

2

Drain