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UPD6P8 Datasheet(PDF) 65 Page - Renesas Technology Corp |
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UPD6P8 Datasheet(HTML) 65 Page - Renesas Technology Corp |
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65 / 101 page ![]() 63 µPD6P8, 6P8A, 6P8B Data Sheet U17848EJ5V0DS 12. WRITING AND VERIFYING ONE-TIME PROM (PROGRAM MEMORY) ( µPD6P8) The program memory of the µPD6P8 is a one-time PROM of 2026 × 10 bits. To write or verify this one-time PROM, the pins shown in Table 12-1 are used. Note that no address input pin is used. Instead, the address is updated by using the clock input from the CLK pin. Table 12-1. Pins Used to Write/Verify Program Memory Pin Name Function VPP Supplies voltage when writing/verifying program memory. Apply +10.5 V to this pin. VDD Power supply. Supply +3 V to this pin when writing/verifying program memory. CLK Inputs clock to update address when writing/verifying program memory. By inputting a pulse four times to the CLK pin, the address of the program memory is updated. MD0 to MD3 Input to select the operation mode when writing/verifying program memory. D0 to D7 Inputs/outputs 8-bit data when writing/verifying program memory. XIN, XOUT Clock necessary for writing program memory. Connect a 4 MHz ceramic resonator to this pin. 12.1 Operating Mode When Writing/Verifying Program Memory The µPD6P8 is set in the program memory write/verify mode when +10.5 V is applied to the VPP pin after the µPD6P8 has been in the reset status (VDD = 3 V, VPP = 0 V) for a specific time. In this mode, the operating modes shown in Table 12-2 can be set by setting the MD0 through MD3 pins. Connect all the pins other than those shown in Table 12-1 to GND via pull-down resistors. Table 12-2. Setting Operating Mode Setting of Operating Mode Operating Mode VPP VDD MD0 MD1 MD2 MD3 +10.5 V +3 V H L H L Clear program memory address to 0 L H H H Write mode L L H H Verify mode H × H H Program inhibit mode ×: don’t care (L or H) |
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