MAC224 Series MAC224A Series

2

Motorola Thyristor Device Data

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1

°C/W

Thermal Resistance, Junction to Ambient

R

θJA

60

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current

(Rated VDRM, Gate Open) TJ = 25°C

TJ = 125°C

IDRM

—

—

—

—

10

2

µA

mA

Peak On-State Voltage

(ITM = 56 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)

VTM

—

1.4

1.85

Volts

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+); MT2(+), G(–); MT2(+), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

IGT

—

—

25

40

50

75

mA

Gate Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+); MT2(–), G(–); MT(+), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

VGT

—

—

1.1

1.3

2

2.5

Volts

Gate Non-Trigger Voltage

(VD = Rated VDRM, TJ = 125°C, RL = 10 k)

MT2(+), G(+); MT2(–), G(–); MT(+), G(–)

MT2(–), G(+)

VGD

0.2

0.2

—

—

—

—

Volts

Holding Current (VD = 12 Vdc, Gate Open)

IH

—

30

75

mA

Gate Controlled Turn-On Time

(VD = Rated VDRM, ITM = 56 A Peak, IG = 200 mA)

tgt

—

1.5

—

µs

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform, TC = 125°C)

dv/dt

—

50

—

V/

µs

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 56 A Peak, Commutating

di/dt = 20.2 A/ms, Gate Unenergized, TC = 75°C)

dv/dt(c)

—

5

—

V/

µs

*This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to

be used at high sustained currents.

FIGURE 2 – ON-STATE POWER DISSIPATION

FIGURE 1 – RMS CURRENT DERATING

75

95

IT(RMS), RMS ON-STATE CURRENT (AMPS)*

25

20

5.0

125

115

85

10

0

15

105

10

0

0

25

20

24

12

5.0

15

IT(RMS), RMS ON-STATE CURRENT (AMPS)*

120

110

100

90

80

30

35

40

30

35

40

6.0

18

30

36

48

42

54

60