DMN10H220LK3

Document number: DS39975 Rev. 3 - 2

2 of 7

www.diodes.com

April 2019

© Diodes Incorporated

DMN10H220LK3

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 5) VGS = 10V

TC = +25°C

TC = +100°C

ID

7.5

4.7

A

Maximum Body Diode Forward Current (Note 6)

IS

1.5

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

30

A

Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)

ISM

30

A

Avalanche Current

L = 0.1mH

IAS

4.7

A

Avalanche Energy

L = 0.1mH

EAS

1.1

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TC = +25°C

PD

18.7

W

TC = +100°C

7.5

Thermal Resistance, Junction to Ambient (Note 6)

RθJA

92

°C/W

Thermal Resistance, Junction to Case (Note 5)

RθJC

6.7

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

100





V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS





1

µA

VDS = 100V, VGS = 0V

Gate-Source Leakage

IGSS



 

100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1

1.5

2.5

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)



179

220

m

Ω

VGS = 10V, ID = 2A



228

250

m

Ω

VGS = 4.5V, ID = 1A

Diode Forward Voltage

VSD



0.8

1.3

V

VGS = 0V, IS = 2A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

Ciss



384



pF

VDS = 25V, f = 1MHz,

VGS = 0V

Output Capacitance

Coss



23



Reverse Transfer Capacitance

Crss



17



Gate Resistance

RG



2.4



Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg



3.7



nC

VDD = 50V, ID = 1.6A

Total Gate Charge (VGS = 10V)

Qg



6.7



Gate-Source Charge

Qgs



1.3



Gate-Drain Charge

Qgd



2



Turn-On Delay Time

tD(ON)



6.2



ns

VDD = 50V, VGS = 4.5V,

RG = 6.8Ω, ID = 1.0A

Turn-On Rise Time

tR



8.7



Turn-Off Delay Time

tD(OFF)



7.4



Turn-Off Fall Time

tF



4.2



Body Diode Reverse Recovery Time

tRR



20



ns

IS = 1.1A, dI/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR



11



nC

Notes:

5. Device mounted on infinite heatsink.

6. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.

7. Guaranteed by design. Not subject to production testing.

8. Short duration pulse test used to minimize self-heating effect.