Philips Semiconductors

Product specification

P-channel enhancement mode

BSH201

MOS transistor

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low threshold voltage

V

DS = -60 V

• Fast switching

• Logic level compatible

I

D = -0.3 A

• Subminiature surface mount

package

R

DS(ON) ≤ 2.5 Ω (VGS = -10 V)

GENERAL DESCRIPTION

PINNING

SOT23

P-channel, enhancement mode,

PIN

DESCRIPTION

logic

level,

field-effect

power

transistor. This device has low

1

gate

threshold voltage and extremely

fast switching making it ideal for

2

source

battery powered applications and

high speed digital interfacing.

3

drain

The BSH201 is supplied in the

SOT23

subminiature

surface

mounting package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DS

Drain-source voltage

-

-60

V

V

DGR

Drain-gate voltage

R

GS = 20 kΩ

-

-60

V

V

GS

Gate-source voltage

-

± 20

V

I

D

Drain current (DC)

T

a = 25 ˚C

-

-0.3

A

T

a = 100 ˚C

-

-0.19

A

I

DM

Drain current (pulse peak value)

T

a = 25 ˚C

-

-1.2

A

P

tot

Total power dissipation

T

a = 25 ˚C

-

0.417

W

T

a = 100 ˚C

-

0.17

W

T

stg, Tj

Storage & operating temperature

- 55

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-a

Thermal resistance junction to

FR4 board, minimum

300

-

K/W

ambient

footprint

d

g

s

1

2

3

Top view

August 1998

1

Rev 1.000