Philips Semiconductors

BST82

N-channel enhancement mode field-effect transistor

Product specification

Rev. 03 — 26 July 2000

3 of 13

9397 750 07223

© Philips Electronics N.V. 2000. All rights reserved.

VGS ≥ 5V

Fig 1.

Normalized total power dissipation as a

function of solder point temperature.

Fig 2.

Normalized continuous drain current as a

function of solder point temperature.

Tsp =25 °C; IDM is single pulse.

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03aa17

0

20

40

60

80

100

120

0

25

50

75

100

125

150

175

P

der

Tsp (

o

C)

(%)

03aa25

0

20

40

60

80

100

120

0

25

50

75

100

125

150

175

I

der

T

sp

(

o

C)

(%)

P

der

P

tot

P

tot 25 C

°

()

----------------------

100%

×

=

I

der

I

D

I

D25 C

°

()

-------------------

100%

×

=

03aa60

10-3

10-2

10-1

1

110

102

103

VDS (V)

ID

(A)

D.C.

100 ms

10 ms

RDSon = VDS/ ID

1 ms

tp = 10 µs

100

µs

Tsp = 25

oC

tp

tp

T

P

t

T

δ =