GF4450 datasheet(2/5 Pages) GE

2 / 5 page

Electrical Characteristics (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250

µA60

––

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250

µA

2.0

––

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

––

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 60V, VGS = 0V

––

1.0

µA

On-State Drain Current(2)

ID(on)

VDS

≥ 5V, VGS = 10V

––

Drain-Source On-State Resistance(2)

RDS(on)

VGS = 10V, ID = 7.5A

–

Ω

VGS = 6.0V, ID = 6.5A

–

Forward Transconductance(2)

gfs

VDS = 15V, ID = 7.5A

–

Dynamic

Total Gate Charge

–

Gate-Source Charge

Qgs

VDS = 30V, VGS = 10V

–

Gate-Drain Charge

Qgd

ID = 7.5A

–

Turn-On Delay Time

td(on)

–

Rise Time

VDD = 30V, RL = 30

Ω

–

Turn-Off Delay Time

td(off)

≈ 1A, VGEN = 10V

–

117

Fall Time

RG = 6

Ω

–

Input Capacitance

Ciss

VGS = 0V

–

3147

–

Output Capacitance

Coss

VDS = 30V

–

283

–

Reverse Transfer Capacitance

Crss

f = 1.0MHZ

–

140

–

Source-Drain Diode

Diode Forward Voltage

VSD

IS = 2.1A, VGS = 0V

–

0.71

1.2

Max. Diode Forward Current

––

2.1

Notes: (1) Surface Mounted on FR4 Board, t

≤ 10s

(2) Pulse test; pulse width

≤ 300µs, duty cycle ≤ 2%

GF4450

N-Channel Enhancement-Mode MOSFET

VIN

VDD

VGEN

VOUT

DUT

Input, VIN

td(on)

Output, VOUT

ton

td(off)

toff

INVERTED

90%

10%

90 %

50%

10%

90%

PULSE WIDTH

Switching

Test Circuit

Switching

Waveforms

GF4450 Datasheet(PDF) 2 Page - General Semiconductor

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