Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4506AX

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65 % ; clean and dustfree

-

-

2500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

22

-

pF

heatsink

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

2

V

-

-

1.0

mA

I

CES

V

-

-

2.0

mA

T

BV

EBO

Emitter-base breakdown voltage

I

7.5

13.5

-

V

V

CEOsust

Collector-emitter sustaining voltage

I

800

-

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltage

I

-

-

3.0

V

V

BEsat

Base-emitter saturation voltage

I

0.8

0.89

0.98

V

h

FE

DC current gain

I

-

10

-

h

FE

I

4.2

5.5

7.3

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (16kHz line

I

deflection circuit)

t

s

Turn-off storage time

3.7

4.6

µs

t

f

Turn-off fall time

300

450

ns

Fig.1. Test circuit for V

Fig.2. Oscilloscope display for V

+ 50v

100-200R

Horizontal

Vertical

Oscilloscope

1R

6V

30-60 Hz

100R

VCE / V

min

VCEOsust

IC / mA

100

200

250

0

2 Measured with half sine-wave voltage (curve tracer).

July 1999

2

Rev 1.000