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FSB50760BSFS Datasheet(PDF) 2 Page - ON Semiconductor |
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FSB50760BSFS Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 12 page ![]() FSB50760BSF / FSB50760BSFS www.onsemi.com 2 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Packing Type Quantity 50760BSF FSB50760BSF SPM5P−023 Rail NA 15 50760BSFS FSB50760BSFS SPM5Q−023 Tape & Reel 330 mm 450 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Conditions Rating Unit INVERTER PART (Each MOSFET Unless Otherwise Specified) VPN DC Link Input Voltage, Drain−Source Voltage of Each MOSFET 600 V BVDSS Drain−Source Voltage VIN = 0V, ID = 250 mA 600 V IPN Zero−Bias Static Leakage Current VPN = 400 V, VIN = 0 V, VDD = VBS = 0 V, TC = TJ = 25°C for all phase 40 mA *ID 25 Each MOSFET Drain Current, Continuous TC = 25°C 3.6 A *ID 80 Each MOSFET Drain Current, Continuous TC = 80°C 2.7 A *IDP Each MOSFET Drain Current, Peak TC = 25°C, PW < 100 ms 9.4 A *IDRMS Each FRFET Drain Current, Rms TC = 80°C, FPWM < 20 kHz 1.9 Arms *PD Maximum Power Dissipation TC = 25°C, For Each MOSFET 14.5 W CONTROL PART (Each HVIC Unless Otherwise Specified) VDD Control Supply Voltage Applied Between VDD and COM 20 V VBS High−side Bias Voltage Applied Between VB and VS 20 V VIN Input Signal Voltage Applied Between IN and COM −0.3 ~ VDD+0.3 V BOOTSTRAP DIODE PART (Each Bootstrap Diode Unless Otherwise Specified.) VRRMB Maximum Repetitive Reverse Voltage 600 V * IFB Forward Current TC = 25°C 0.5 A * IFPB Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 1.5 A THERMAL RESISTANCE Rth(j−c)Q Junction to Case Thermal Resistance (Note 1) Inverter MOSFET part, (Per Module) 2.15 °C/W TOTAL SYSTEM TJ Operating Junction Temperature −40 ~ 150 °C TSTG Storage Temperature −40 ~ 125 °C VISO Isolation Voltage 60 Hz, Sinusoidal, 1 minute, Connection Pins to Heatsink 1500 Vrms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. For the Measurement Point of Case Temperature TC, Please refer to Figure 4. 2. Marking “ * ” Is Calculation Value or Design Factor. 3. Using contiunously under heavy loads or excessive assembly conditions (e.g. the application of high temperature/ current/ voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/ voltage, etc.) are within the absolute maximum ratings and the operating ranges. |
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