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FSB50760BSFS Datasheet(PDF) 2 Page - ON Semiconductor

Part # FSB50760BSFS
Description  600 V RDS(ON) = 830 m (Max) SuperFET MOSFET 3−Phase Inverter with Gate Drivers and Protection
PDF  12 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FSB50760BSFS Datasheet(HTML) 2 Page - ON Semiconductor

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FSB50760BSF / FSB50760BSFS
www.onsemi.com
2
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Packing Type
Quantity
50760BSF
FSB50760BSF
SPM5P−023
Rail
NA
15
50760BSFS
FSB50760BSFS
SPM5Q−023
Tape & Reel
330 mm
450
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Conditions
Rating
Unit
INVERTER PART (Each MOSFET Unless Otherwise Specified)
VPN
DC Link Input Voltage,
Drain−Source Voltage of Each MOSFET
600
V
BVDSS
Drain−Source Voltage
VIN = 0V, ID = 250 mA
600
V
IPN
Zero−Bias Static Leakage Current
VPN = 400 V, VIN = 0 V,
VDD = VBS = 0 V,
TC = TJ = 25°C for all phase
40
mA
*ID 25
Each MOSFET Drain Current, Continuous
TC = 25°C
3.6
A
*ID 80
Each MOSFET Drain Current, Continuous
TC = 80°C
2.7
A
*IDP
Each MOSFET Drain Current, Peak
TC = 25°C, PW < 100 ms
9.4
A
*IDRMS
Each FRFET Drain Current, Rms
TC = 80°C, FPWM < 20 kHz
1.9
Arms
*PD
Maximum Power Dissipation
TC = 25°C, For Each MOSFET
14.5
W
CONTROL PART (Each HVIC Unless Otherwise Specified)
VDD
Control Supply Voltage
Applied Between VDD and COM
20
V
VBS
High−side Bias Voltage
Applied Between VB and VS
20
V
VIN
Input Signal Voltage
Applied Between IN and COM
−0.3 ~ VDD+0.3
V
BOOTSTRAP DIODE PART (Each Bootstrap Diode Unless Otherwise Specified.)
VRRMB
Maximum Repetitive Reverse Voltage
600
V
* IFB
Forward Current
TC = 25°C
0.5
A
* IFPB
Forward Current (Peak)
TC = 25°C, Under 1ms Pulse Width
1.5
A
THERMAL RESISTANCE
Rth(j−c)Q
Junction to Case Thermal Resistance
(Note 1)
Inverter MOSFET part, (Per Module)
2.15
°C/W
TOTAL SYSTEM
TJ
Operating Junction Temperature
−40 ~ 150
°C
TSTG
Storage Temperature
−40 ~ 125
°C
VISO
Isolation Voltage
60 Hz, Sinusoidal, 1 minute,
Connection Pins to Heatsink
1500
Vrms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. For the Measurement Point of Case Temperature TC, Please refer to Figure 4.
2. Marking “ * ” Is Calculation Value or Design Factor.
3. Using contiunously under heavy loads or excessive assembly conditions (e.g. the application of high temperature/ current/ voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions
(i.e. operating temperature/ current/ voltage, etc.) are within the absolute maximum ratings and the operating ranges.



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