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DS20002090F-page 7

MCP73871

Chip Enable (CE)

Input High Voltage Level

VIH

1.8

—

—

V

Input Low Voltage Level

VIL

——

0.8

V

Input Leakage Current

ILK

—0.01

1

µA

VCE =VDD

Input Source Selection (SEL)

Input High Voltage Level

VIH

1.8

—

—

V

Input Low Voltage Level

VIL

——

0.8

V

Input Leakage Current

ILK

—0.01

1

µA

VSEL =VDD

Thermistor Bias

Thermistor Current

Source

ITHERM

47

50

53

µA

2 k

 <RTHERM <50 k

Thermistor Comparator

Upper Trip Threshold

VT1

1.20

1.24

1.26

V

VT1 Low-to-High

Upper Trip Point

Hysteresis

VT1HYS

—-40

—

mV

Lower Trip Threshold

VT2

0.23

0.25

0.27

V

VT2 High-to-Low

Lower Trip Point

Hysteresis

VT2HYS

—40

—

mV

Thermal Shutdown

Die Temperature

TSD

—150

—

C

Die Temperature

Hysteresis

TSDHYS

—10

—

C

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits apply for VIN =VREG + 0.3V to 6V, TA = -40°C to +85°C.

Typical values are at +25°C, VIN =[VREG (typical) + 1.0V]

Parameters

Sym

Min

Typ

Max

Units

Conditions

Note 1:

The value is ensured by design and not production tested.

2:

The maximum available charge current is also limited by the value set at PROG1 input.