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APT25GP90BDF1 Datasheet(PDF) 4 Page - Advanced Power Technology

Part # APT25GP90BDF1
Description  POWER MOS 7 IGBT
PDF  9 Pages
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Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT25GP90BDF1 Datasheet(HTML) 4 Page - Advanced Power Technology

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APT25GP90BDF1
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
T
J = 125°C,VGE =15V
T
J = 25°C,VGE =15V
VCE= 600V
RG = 5Ω
L = 100 µH
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
10
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60
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60
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0
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0
25
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75
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125
VCE = 600V
VGE = +15V
RG = 5 Ω
VCE = 600V
VGE = +15V
TJ = 125°C
VCE = 600V
VGE = +15V
RG = 5 Ω
VCE = 600V
VGE = +15V
RG = 5 Ω
R
G = 5Ω, L = 100
µ
H, VCE = 600V
R
G = 5Ω, L = 100
µ
H, VCE = 600V
VCE =600V
TJ = 25°C, TJ =125°C
RG = 5Ω
L = 100 µH
18
16
14
12
10
8
6
4
2
0
50
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10
0
3000
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0
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0
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0
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0
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0
VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
Eon2, 50A
Eoff, 50A
Eon2, 25A
Eoff, 25A
Eon2, 12.5A
Eoff, 12.5A
Eon2,50A
Eoff,25A
Eon2,25A
Eoff,50A
Eon2,12.5A
Eoff,12.5A



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