BUJ103AX datasheet(6/12 Pages) PHILIPS

6 / 12 page

August 1998

Rev 1.000

Philips Semiconductors

Product speciﬁcation

Silicon Diffused Power Transistor

BUJ103AX

Fig.13. Reverse bias safe operating area. T

j ≤ Tj max

Fig.14. Test circuit for reverse bias

safe operating area.

cl ≤ 1000V; Vcc = 150V; VBB = -5V; LB = 1µH;

c = 200µH

Fig.15. Forward bias safe operating area. T

hs ≤ 25 ˚C

(1)

tot max and Ptot peak max lines.

(2)

Second breakdown limits.

Region of permissible DC operation.

Extension for repetitive pulse operation.

III

Extension during turn-on in single

transistor converters provided that

BE ≤ 100 Ω and tp ≤ 0.6 µs.

NB:

Mounted with heatsink compound and

± 5 newton force on the centre of the

envelope.

100

200

300

400

500

600

700

800

900

VCEclamp (V)

IC (A)

100

1,000

0.001

0.01

0.1

100

VCEclamp (V)

IC (A)

Icm max

Ic max

III

(1)

(2)

Duty Cycle = 0.01

tp =

20us

50us

100us

200us

500us

1ms

2ms

IBon

-VBB

T.U.T.

VCC

VCL

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