7
7-33
Model 7721 Series
Parameter
Symbol
Conditions1
Min.
Typ.
Max.
Units
Q1-Q4 IGBT
Continuous Collector Current
IC
TC = 25°C
60
A
TC = 90°C
32
A
Pulsed Collector Current
ICM
120
A
Collector Leakage Current
ICES
VGE = 0V, = .8x600V
200
µA
VGE = 0V, VCE = .8x600V,TJ = 125°C
1
mA
Saturation Voltage
VCE(ON)
IC = 32A, VGE = 15V
2.5
V
Gate Threshold Voltage
VGE(TH)
VCE = VGE, IC = 250µA
2.5
5.0
V
Gate Leakage Current
IGES
VGE = ±20V
±100
nA
Total Gate Charge (turn on)
Qg
IC = 32A, VCC = 300V,VGE = 15V
125
150
nC
Gate Emitter Charge (turn on)
Qge
IC = 32A, VCC = 300V,VGE = 15V
23
35
nC
Gate Collector Charge (turn on)
Qgc
IC = 32A, VCC = 300V,VGE = 15V
50
75
nC
Turn Off Delay Time
td(off)
IC = 32A, VCC = 400V,VGE = 15V,RG = 4.7Ω
100
200
ns
Fall Time
tf
IC = 32A, VCC = 400V,VGE = 15V,RG = 4.7Ω
80
150
ns
Total Switching Loss
Ets
IC = 32A, VCC = 400V,VGE = 15V,RG = 4.7Ω
.8
1.6
mJ
Input Capacitance
Cies
VGE = 0V, VCC = 25V, f = 1MHz
2500
pF
Output Capacitance
Coes
VGE = 0V, VCC = 25V, f = 1MHz
230
pF
Reverse Transfer Capacitance
Cres
VGE = 0V, VCC = 25V, f = 1MHz
70
pF
Junction Temperature
TJ
150
°C
Thermal Resistance
Rthjc
.60
°C/W
D1-D4 Fred Diodes
Reverse Leakage Current
IR
VR = 600V
1
500
µA
VR = .600V, TJ =150°C
.3
1.5
mA
Forward Voltage
VF
IF = 25A
1.5
2.8
V
IF = 25A, TJ =150°C
1.3
2.5
V
Reverse Recovery Time
trr
IF = 1A, -di/dt = 100A/µs
30
40
ns
Junction Temperature
Tj
175
°C
Thermal Resistance
Rthjc
1.2
°C/W
TH1 NTC Thermistor
Resistance
R25
I =1mA
22.5
25
27.5
K
Ω
Resistance Ratio
RT/R25
t = 80°C
.126
t = 90°C
.0916
t = 100°C
.0679
t = 110°C
.0511
Dissipation Constant
PD
1.0
mW/°C
Thermal Time Constant
t
10
sec
ELECTRICAL CHARACTERISTICS (7721-2A)
1 - TCase = 25°C unless otherwise specified.
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