Nexperia

PMPB09R5VP

12 V, P-channel Trench MOSFET

VDS (V)

0

-4

-3

-1

-2

aaa-033040

-20

-10

-30

-40

ID

(A)

0

-1.8 V

VGS = -1.2 V

-2.5 V

-2.0 V

-4.5 V

-1.5 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-033041

VGS (V)

0

-1.5

-1.0

-0.5

-10-4

-10-5

-10-3

ID

(A)

-10-6

min

typ

max

Tj = 25 °C; VDS = -10 V

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

ID (A)

0

-40

-30

-10

-20

aaa-033042

20

30

10

40

50

RDSon

0

-1.8 V

-2.0 V

-2.5 V

VGS = -4.5 V

-3.0 V

-1.5 V

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

VGS (V)

0

-8

-6

-2

-4

aaa-033043

20

30

10

40

50

RDSon

0

Tj = 25 °C

Tj = 150 °C

ID = -10.3 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

PMPB09R5VP

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2021. All rights reserved

Product data sheet

10 February 2021

7 / 14