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63CPQ080 Datasheet(PDF) 1 Page - SMC Diode Solutions Co. LTD |
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63CPQ080 Datasheet(HTML) 1 Page - SMC Diode Solutions Co. LTD |
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1 / 4 page  Technical Data Data Sheet N0208, Rev. B China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com 63CPQ080 63CPQ100 63CPQ080/63CPQ100 SCHOTTKY RECTIFIER * Pulse width < 300 µs, duty cycle < 2% Features Circuit Diagram Applications Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR - 80(63CPQ080) 100(63CPQ100) V Average Rectified Forward Current IF (AV) 50% duty cycle @Tc=105°C, rectangular wave form 30(Per Leg) A 60(Per Device) Peak One Cycle Non-Repetitive Surge Current(Per Leg) IFSM 8.3ms, Half Sine pulse, TC = 25 C 492 A Non-Repetitive Avalanche Energy(Per Leg) EAS TJ=25℃,IAS=1A, L=30 mH 15 mJ Repetitive Avalanche Current(Per Leg) IAR Current decaying linearly to zero in 1 μ sec Frequency limited by TJ max. VA=1.5×VR typical 1 A Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units Forward Voltage Drop (Per Leg)* VF1 @ 30A, Pulse, TJ = 25 C 0.78 0.80 V VF2 @ 30A, Pulse, TJ = 125 C 0.73 0.75 V Reverse Current (Per Leg)* IR1 @VR = rated VR, TJ = 25 C 0.01 0.3 mA IR2 @VR = rated VR, TJ = 125 C 0.5 25.0 mA Junction Capacitance(Per Leg) CT @VR = 5V, TC = 25 C, fSIG = 1MHz 400 1300 pF Series Inductance (Per Lleg) LS Measured lead to lead 5 mm from package body 7.5 - V Voltage Rate of Change dv/dt - - 10,000 V/s 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Switching power supply Converters Free-Wheeling diodes Reverse battery protection TO-247AD |
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