Technical Data

Data Sheet N2030, Rev. B



China - Germany - Korea - Singapore - United States 



http://www.smc-diodes.com - sales@ smc-diodes.com 

B5819WS

B5819WS SCHOTTKY BARRIER DIODE

Characteristic

Symbol

Min

Max

Units

Test Condition

Reverse Breakdown Voltage *

V(BR)

40

-

V

IR=1mA

Forward Voltage *

VFM

-

0.6

V

IF=1A

-

0.9

V

IF=3A

Reverse Leakage Current *

IRM

-

200

uA VR=40V

Capacitance between terminals

CT

-

120

pF VR=4V,f=1.0MHz

* Pulse width < 300 µs, duty cycle < 2%

Features

Circuit Diagram

Mechanical Data

Maximum Ratings @TA=25°C unless otherwise specified

Parameter

Marking code

Symbol

B5819WS

SL

Units

Maximum repetitive peak reverse voltage

VRRM

40

V

Maximum DC blocking voltage

VR

Maximum RMS voltage

VR(RMS)

28

V

Average rectified output current

IO

1.0

A

Peak forward surge current 8.3ms single half sine-

wave superimposed on rated load (JEDEC Method)

IFSM

9

A

Power Dissipation

Pd

250

mW

Typical thermal resistance

RΘJA

500

°C/W

Operating junction and storage temperature range

TJ, TSTG

-65 to +150

°C

Electrical Characteristics @TA=25°C unless otherwise specified



Case: Molded plastic body



Terminals: Plated leads solderable per MIL-STD-750,



Method 2026



Polarity: Polarity symbols marked on case



For use in low voltage, high frequency inverters



Free wheeling, and polanty protection applications



This is a Halogen Free device



All SMC parts are traceable to the wafer lot



Additional testing can be offered upon

request

SOD-323