Nexperia

PMV164ENE

60 V, N-channel Trench MOSFET

aaa-29939

VDS (V)

10-1

102

10

1

1

10-1

10

ID

(A)

10-2

100 µs

tp =

10 µs

1 ms

10 ms

100 ms

DC; Tsp = 25 °C

DC; Tamb = 25 °C; 6 cm2

Limit RDSon = VDS/ID

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

PMV164ENE

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Product data sheet

29 November 2021

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