Nexperia

PMV213SN

N-channel TrenchMOS standard level FET

aaa-032679

10-1

10-2

1

10

ID

(A)

10-3

VDS (V)

1

103

102

10

Limit RDSon = VDS/ID

DC

tp = 10 µs

100 µs

1 ms

10 ms

100 ms

Tsp = 25 °C; IDM is single pulse; VGS = 10 V

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

PMV213SN

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Nexperia B.V. 2020. All rights reserved

Product data sheet

23 November 2020

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