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Nexperia

PMV65XP

20 V, single P-channel Trench MOSFET

PMV65XP

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Product data sheet

12 February 2013

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5. Pinning information

Table 2.

Pinning information

Pin

Symbol Description

Simplified outline

Graphic symbol

1

G

gate

2

S

source

3

D

drain

1

2

3

TO-236AB (SOT23)

S

D

G

017aaa257

6. Ordering information

Table 3.

Ordering information

Package

Type number

Name

Description

Version

PMV65XP

TO-236AB

plastic surface-mounted package; 3 leads

SOT23

7. Marking

Table 4.

Marking codes

Type number

Marking code

[1]

PMV65XP

%M9

[1] % = placeholder for manufacturing site code

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

-

-20

V

VGS

gate-source voltage

Tj = 25 °C

-12

12

V

VGS = -4.5 V; Tsp = 25 °C

-

-4.3

A

VGS = -4.5 V; Tamb = 25 °C

[1]

-

-2.8

A

ID

drain current

VGS = -4.5 V; Tamb = 100 °C

[1]

-

-1.8

A

IDM

peak drain current

Tamb = 25 °C; single pulse; tp ≤ 10 µs

-

-16

A

[2]

-

480

mW

Tamb = 25 °C

[1]

-

833

mW

Ptot

total power dissipation

Tsp = 25 °C

-

4165

mW