2N7000 datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Electrical characteristics

2N7000 - 2N7002

4/14

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250µA, VGS =0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = max rating

VDS = max rating,

TC = 125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 18V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

2.1

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 0.5A

VGS = 4.5V, ID = 0.5A

1.8

5.3

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Forward

transconductance

VDS = 10V , ID =0.5A

0.6

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 30V, ID = 0.5A

RG =4.7Ω VGS = 4.5V

(see Figure 15)

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 30V, ID = 1A,

VGS = 5V

(see Figure 16)

1.4

0.8

0.5

2nC

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