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PMZB290UNE

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Product data sheet

Rev. 3 — 23 March 2012

4 of 15

Nexperia

PMZB290UNE

20 V, single N-channel Trench MOSFET

IDM = single pulse

(1) tp = 1 ms

(2) DC; Tsp = 25 °C

(3) tp = 10 ms

(4) tp = 100 ms

(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2

Fig 4.

Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

017aaa374

VDS (V)

10-1

102

10

1

1

10-1

10

ID

(A)

10-2

(1)

(2)

(3)

(4)

(5)

Limit RDSon = VDS/ID