STV160NF03LA datasheet(2/8 Pages) STMICROELECTRONICS

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STV160NF03LA

2/8

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-case

Thermal Resistance Junction-case Max

0.71

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 15 V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V, ID = 80 A

VGS = 10 V, ID = 45 A

VGS = 8 V, ID = 80 A

VGS = 5 V, ID = 40 A

VGS = 10 V, ID=80 A;Tj = 175 °C

VGS = 8 V, ID=80 A; Tj = 175 °C

VGS = 5 V, ID=40 A; Tj = 175 °C

2.1

2.05

2.2

4.2

6.6

8.8

15.4

Ω

ID(on)

On State Drain Current

VDS > ID(on) x RDS(on)max,

VGS =10V

160

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS > ID(on) x RDS(on)max,

ID = 80 A

210

Gate resistance

VDS = 0 V, f = 1 MHz, VGS = 0

1.1

Ω

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

5350

1700

300

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 0 V, f = 1 MHz, VGS = 0

8200

12400

5200

Internal Source Inductance

From the Lead End (6mm from

Package Body) to the Die

Center

3nH

Internal Drain Inductance

Not Available on Surface Mounting

Package

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