1SMA64AT3G datasheet(2/5 Pages) ONSEMI

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1SMA5.0AT3 Series

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MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms

PPK

400

DC Power Dissipation @ TL = 75°C

Measured Zero Lead Length (Note 2)

Derate Above 75

°C

Thermal Resistance from Junction to Lead

RqJL

1.5

mW/

°C

°C/W

DC Power Dissipation (Note 3) @ TA = 25°C

Derate Above 25

°C

Thermal Resistance from Junction to Ambient

RqJA

0.5

4.0

250

mW/

°C

°C/W

Forward Surge Current (Note 4) @ TA = 25°C

IFSM

Operating and Storage Temperature Range

TJ, Tstg

−65 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. 10 X 1000

ms, non−repetitive.

2. 1

″ square copper pad, FR−4 board.

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless

otherwise noted, VF = 3.5 V Max. @ IF = 30 A for all types) (Note 5)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

Test Current

Forward Current

Forward Voltage @ IF

5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive duty

cycle.

Uni−Directional TVS

IPP

VRWM

VC VBR

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