BUL216_01 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.39

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 1600 V

Tj = 125

100

500

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 800 V

250

µA

VCEO(sus)

Collector-Emitter

Sustaining Voltage

IC = 100 mA

L = 25 mH

800

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 10 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 1 A

IB = 0.2 A

IC = 2 A

IB = 0.66 A

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 1 A

IB = 0.2 A

IC = 2 A

IB = 0.66 A

1.2

hFE

∗

DC Current Gain

IC = 0.4 A

VCE = 5 V

IC = 10 mA

VCE = 5 V

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 1.5 A

IB1 = 0.5 A

VBE(off) = -5 V

RBB = 0

Ω

VCL = 250 V

L = 200

µH

2.1

450

3.3

720

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 1.5 A

IB1 = 0.5 A

VBE(off) = -5 V

RBB = 0

Ω

VCL = 250 V

L = 200

µH

Tj = 100

600

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Areas

Derating Curve

BUL216

2/6

BUL216 Datasheet(PDF) 2 Page - STMicroelectronics

BUL216 Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL